Modelling a GTO with PSPICE

Author

Apeldoorn, O. ; Schülting, L. ; Skudelny, H. Ch

Author_Institution

Inst. for Power Electron. & Electr. Drives, Aachen Univ. of Technol., Germany

fYear

1992

fDate

4-9 Oct 1992

Firstpage

1074

Abstract

The structure of a PSPICE gate turn-off thyristor (GTO) model is described. A main principle is to calculate the model parameters without the requirement of physical device data like doping profile and device dimensions. All parameters are derived from the GTO data sheet and from measurements of the dynamic behavior. In order to reduce the number of nodes and the required simulation time, the available PSPICE transistor model is used. A network for a static model consisting of two transistors and four resistors was investigated. A model of a 1600-V/600-A GTO is presented. Comparison between the simulated and measured waveforms confirms the quality of the model

Keywords

SPICE; circuit analysis computing; semiconductor device models; thyristor applications; thyristors; 1600 V; 600 A; GTO data sheet; GTO model; PSPICE transistor model; dynamic behavior measurement; gate turn-off thyristor; measured waveforms; model parameters; nodes; resistors; simulated waveforms; simulation time; transistors; Anodes; Capacitance; Circuit simulation; Circuit testing; Power electronics; SPICE; Semiconductor process modeling; Tail; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE

Conference_Location

Houston, TX

Print_ISBN

0-7803-0635-X

Type

conf

DOI

10.1109/IAS.1992.244428

Filename

244428