Advanced Model and RF-CMOS Design of the Boot-Strapped Inductor

Author

Zito, D. ; Fonte, A. ; Neri, B.

Author_Institution

Univ. of Pisa, Pisa

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

613

Lastpage

616

Abstract

This paper reports a new advanced design of the active circuit named Boot-Strapped Inductor (BSI), which realizes an equivalent inductor with an high quality factor (Q). In particular, a new small-signal circuit model is proposed for an accurate design at high frequency in a modern RF CMOS process, also by taking into account the issues of an algorithmic and low-power consumption circuit design. A case study for 13-GHz low-power applications by using a standard for 90 nm CMOS process is reported. The BSI provides an equivalent inductance close to 1.6 nH with an associated quality factor Q close to 200.

Keywords

CMOS integrated circuits; Q-factor; active networks; bootstrap circuits; equivalent circuits; inductors; RF CMOS process; RF-CMOS design; active circuit; boot-strapped inductor; equivalent inductor; frequency 13 GHz; quality factor; size 90 nm; small-signal circuit model; Active inductors; CMOS process; Capacitance; Circuit synthesis; Equivalent circuits; Inductance; MOSFETs; Q factor; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-1377-5

Electronic_ISBN

978-1-4244-1378-2

Type

conf

DOI

10.1109/ICECS.2007.4511066

Filename

4511066