Title :
Numerical simulation of avalanche breakdown in PIN diodes and bipolar transistors
Author :
O´Connell, R.M. ; Shiue, T. ; Hoft, R.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Missouri Univ., Columbia, MO, USA
Abstract :
Numerical simulation of avalanche breakdown in bipolar power semiconductors by modeling impact ionization directly in the basic semiconductor equations is described. Use of the sequential Gummel solution algorithm permits more frequent updating of the impact ionization term, leading to better convergence than with the simultaneous Newton algorithm. Results are presented for a reverse-biased PIN diode and for the reverse-biased collector-base junction of an open-base npn transistor
Keywords :
bipolar transistors; impact ionisation; p-i-n diodes; power electronics; power transistors; avalanche breakdown; bipolar power semiconductors; bipolar transistors; convergence; impact ionization; numerical simulation; open-base npn transistor; reverse-biased PIN diode; reverse-biased collector-base junction; semiconductor equations; sequential Gummel solution algorithm; Avalanche breakdown; Bipolar transistors; Charge carrier processes; Difference equations; Impact ionization; Integral equations; Numerical simulation; Poisson equations; Power semiconductor devices; Semiconductor devices;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244430
