DocumentCode
3363719
Title
Artificial neural network-based design approach for nanoscale field effect diodes
Author
Manavizadeh, N. ; Khodayari, A. ; Karbassian, F. ; Raissi, F. ; Soleimani, E. Asl
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
244
Lastpage
247
Abstract
In this paper, we have applied artificial neural network (ANN) for modeling and simulation of nanoscale filed effect diodes (FEDs). The simulation is based on ANN model which reduces the computational time while keeping the accuracy of physics-based model. Results of the proposed solution have been compared with the data obtained from the Dessis simulation and show that there is a good agreement between the results with the short computing time.
Keywords
electronic engineering computing; field effect devices; neural nets; semiconductor device models; semiconductor diodes; ANN model; Dessis simulation; FED; artificial neural network-based design approach; nanoscale field effect diodes; physics-based model; Artificial neural networks; Iron; Measurement units;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location
Jeju
Print_ISBN
978-1-4577-2139-7
Type
conf
DOI
10.1109/NMDC.2011.6155353
Filename
6155353
Link To Document