• DocumentCode
    3363730
  • Title

    Low temperature deposition of SBT thin films using modified sol-gel solutions

  • Author

    Soyama, N. ; Tokita, Y. ; Mori, S. ; Ogi, K. ; Joshi, V.

  • Author_Institution
    Sanda Plant, Mitsubishi Mater. Corp., Hyogo, Japan
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    587
  • Abstract
    SBT thin films were successfully deposited at low temperature by using modified sol-gel solutions. The solution was prepared from triple complex alkoxide, which was synthesized by optimizing organic ligands for low temperature decomposition. The solution was pyrolysed perfectly at much lower temperature than conventional MOD solution. The temperature was about 340°C. SBT thin films deposited from modified SBT solutions were compared with that from conventional MOD solution. The results suggested that the modified SBT sol-gel solution was more effective for low temperature deposition
  • Keywords
    X-ray diffraction; bismuth compounds; dielectric hysteresis; ferroelectric thin films; pyrolysis; sol-gel processing; strontium compounds; 340 C; FeRAM; P-V characteristics; SrBi2Ta2O9; SrBi2Ta2O9 thin films; ferroelectric performance; low temperature decomposition; low temperature deposition; modified sol-gel solutions; organic ligands; solution pyrolysis; triple complex alkoxide; Barium; Bismuth; Crystallization; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Sputtering; Strontium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942389
  • Filename
    942389