• DocumentCode
    3363764
  • Title

    Fatigue and data retention characteristics of single-grained Pb(Zr,Ti)O3 thin films

  • Author

    Lee, Lang-Sik ; Kim, Chan-Soo ; Joo, Seung-Ki

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    595
  • Abstract
    Fatigue and data retention characteristics of single-grained lead zirconate titanate (PZT) thin films obtained by the PZT seeding method were investigated. There is no loss in switched polarization up to 2×1011 cycles using a 1 MHz square wave form at ±10 V in fatigue testing and no data loss after 30000 sec of memory retention at room temperature. From the activation energy measured at high temperatures, the time required 20% loss in remanent polarization is estimated to be 6.6×107 years at room temperature. In this study, we show that when there were no grain boundaries in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. Thus, the main source of degradation is the grain boundary in the PZT thin films
  • Keywords
    dielectric hysteresis; dielectric polarisation; ferroelectric storage; ferroelectric switching; ferroelectric thin films; grain boundaries; lead compounds; sputtered coatings; 1 MHz; 10 V; 30000 s; 6.6E7 year; PZT seeding method; Pt-PZT-Pt; Pt-PbZrO3TiO3-Pt; Pt/SiO2/Si substrates; RF magnetron sputtering; activation energy; data retention characteristics; fatigue test; ferroelectric nonvolatile memories; grain boundary; memory retention; remanent polarization; room temperature; single-grained PZT thin films; single-grained Pb(Zr,Ti)O3 thin films; switched polarization; Degradation; Energy measurement; Fatigue; Grain boundaries; Loss measurement; Polarization; Temperature measurement; Testing; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942391
  • Filename
    942391