Reliable extraction of series resistance in silicon nanowire FETs using Y-function technique

Series resistance (R_sd) and mobility attenuation factors (θ₁, and θ₂) of silicon nanowire FET (NWFET) are simultaneously extracted using Tanaka method (YΦ method) and Y-function technique. Consecutively, simulated drain current (I_d) and transconductance (g_m) is precisely fitted to the measured data with the extracted θ₁, θ₂, and R_sd. Significantly reduced mobility degradation due to volume inversion effect makes the Rsd values extracted from both the Y-function technique and the YΦ method practically the same. It is quantitatively confirmed that the Y-function technique assuming constant mobility is quite reliable to extract R_sd. Moreover, the dependence of the R_sd on the channel diameter (d_nw) and the doping condition (n-, p-type) is investigated. It is shown that extension resistance (R_ext) increases as d_nw decreases and R_sd of p-type NWFET is smaller than that of n-type NWFET.