• DocumentCode
    3363955
  • Title

    Soft-Error Charge-Sharing Mechanisms at Sub-100nm Technology Nodes

  • Author

    Massengill, L.W. ; Amusan, O.A. ; DasGupta, S. ; Sternberg, A.L. ; Black, J.D. ; Witulski, A.F. ; Bhuva, B.L. ; Alles, M.L.

  • Author_Institution
    Vanderbilt Univ., Nashville
  • fYear
    2007
  • fDate
    May 30 2007-June 1 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Analyses of ion-induced charge sharing effects at the 90 nm CMOS technology node are discussed. Two mechanisms leading to enhanced charge collection and increased soft error sensitivity are presented.
  • Keywords
    CMOS integrated circuits; sensitivity analysis; CMOS technology node; charge collection; ion induced charge sharing effects; size 90 nm; soft error sensitivity; sub 100 nm technology; CMOS digital integrated circuits; CMOS technology; Error analysis; Integrated circuit technology; Isolation technology; Radiation hardening; Single event upset; Space technology; Structural engineering; Voltage; SER; SEU mechanisms; charge collection; charge sharing; single event effects; soft errors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    1-4244-0757-5
  • Electronic_ISBN
    1-4244-0757-5
  • Type

    conf

  • DOI
    10.1109/ICICDT.2007.4299576
  • Filename
    4299576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363955