DocumentCode
3363981
Title
Electrical, thermal and warpage investigation on high bandwidth PoP
Author
Hung, Min-Feng ; Chang-Chi Lee ; Hung-Hsiang Cheng ; Cheng, Ming ; Lin, Tao ; Ying-Chih Lee ; Chin-Li Kao ; Po-Chih Pan
Author_Institution
Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
530
Lastpage
533
Abstract
Package-on-package (PoP) is widely used in smartphone to provide high bandwidth between application processor and memory. The content of communication is rapidly changing from text to picture and video, which creates an insatiable demand for bandwidth. In order to get bandwidth increased, one way is to increase the number of data I/O. Therefore, an improvement of current PoP structure to increase the number of interconnects becomes very important and imperative. In this work, three High Bandwidth PoP (HB PoP) structures are proposed and investigated in electrical, thermal and warpage performance through modeling. Compared with conventional PoP, the study shows that the proposed HB PoPs have superior warpage performance, and comparable electrical and thermal performance with conventional PoP.
Keywords
packaging; smart phones; HB PoP structures; application processor; data I-O; electrical investigation; high-bandwidth PoP structure; interconnects; package-on-package structure; smart phone; thermal investigation; warpage investigation; Bandwidth; Data models; Dielectric materials; Electronic packaging thermal management; Substrates; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location
Singapore
Print_ISBN
978-1-4799-2832-3
Type
conf
DOI
10.1109/EPTC.2013.6745776
Filename
6745776
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