Title :
The ferroelectric properties of Pb5Ge3O11 thin films made by MOCVD and RTP techniques
Author :
Li, Tingkai ; Ying, Hong ; Hsu, Sheng Teng
Author_Institution :
Sharp Labs. of America, Inc, Camas, WA, USA
Abstract :
c-axis oriented ferroelectric Pb5Ge3O11 (PGO) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) and rapid thermal process (RTP) annealing techniques. The films showed very good ferroelectric properties at 5 V: 2Pr and 2Ec values were 3.0-6.0 μC/cm2 and 90-110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1×109 switching cycles. The retention charge remained at 0.93 after a waiting time of 1500 seconds. The leakage currents of the PGO films were 2-5×10-7 A/cm 2 at 100 kV/cm and dielectric constants were 40-70. The memory window of Pt/PGO/Ir/SiO2/Si structures is about 3.8 V. The high quality MOCVD Pb5Ge3O11 films can be used for one-transistor memory applications
Keywords :
MOCVD; dielectric hysteresis; ferroelectric storage; ferroelectric switching; ferroelectric thin films; lead compounds; leakage currents; permittivity; rapid thermal annealing; 1500 s; 5 V; MOCVD; Pb5Ge3O11; Pt-Pb5Ge3O11-Ir-SiO2 -Si; Pt/PGO/Ir/SiO2/Si; RTP; c-axis oriented films; dielectric constants; fatigue characteristics; ferroelectric Pb5Ge3O11 thin films; ferroelectric properties; leakage currents; memory window; one-transistor memory applications; retention charge; switching cycles; waiting time; Chemical vapor deposition; Dielectric constant; Fatigue; Ferroelectric films; Ferroelectric materials; Leakage current; MOCVD; Rapid thermal annealing; Rapid thermal processing; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942403
