Title :
SRAM Yield Sensitivity to Supply Voltage Fluctuations and Its Implications on Vmin
Author :
Kanj, Rouwaida ; Joshi, Rajiv ; Nassif, Sani
Author_Institution :
IBM, Austin
fDate :
May 30 2007-June 1 2007
Abstract :
With technology scaling and migration towards low supply low-power designs, supply voltage and threshold voltage fluctuations are becoming increasingly significant for circuit performance. In this paper, we analyze the sensitivity of statistical performance and yield of 65 nm SRAM designs to these fluctuations. The implications of these fluctuations on Vmin and power budgeting are also studied.
Keywords :
SRAM chips; integrated circuit design; logic design; low-power electronics; sensitivity; statistical analysis; SRAM yield sensitivity; low supply low-power designs; size 65 nm; statistical performance; supply voltage fluctuations; threshold voltage; Circuits; Degradation; Delay; Logic gates; Performance analysis; Performance loss; Power grids; Random access memory; Threshold voltage; Voltage fluctuations;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299588
