Application of the thin-film SOI power MOSFET fabricated by sub-μm-rule CMOS/SOI process for the DC-DC converter

Author

Hiraoka, Yasushi ; Matsumoto, Satoshi ; Tsukamoto, Kazuo ; Sakai, Tatsuo ; Yachi, Toshiaki

Author_Institution

NTT Integrated Inf. & Energy Syst. Labs., Tokyo, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

145

Lastpage

148

Abstract

A thin-film SOI power MOSFET was fabricated using a sub-micrometer-rule CMOS/SOI process. The product of input capacitance and on-resistance (C_iss·R_on) was 19.8 Ω·pF and that of output capacitance and on-resistance (C _oss·R_on) was 18.7 Ω·pF. Used as the main switch of a DC-DC converter, the switching frequency was 600 kHz, input voltage was 5 V and output voltage was 3.3 V. The performance of the thin-film SOI power MOSFET was equivalent to that of a main switch device fabricated on a conventional bulk-Si substrate

Keywords

CMOS integrated circuits; DC-DC power convertors; capacitance; electric resistance; power MOSFET; power semiconductor switches; semiconductor device testing; semiconductor thin films; silicon-on-insulator; 3.3 V; 5 V; 600 kHz; CMOS/SOI process; DC-DC converter; DC-DC converter main switch; Si-SiO₂; bulk-Si substrate; input capacitance-on-resistance product; input voltage; main switch device; output capacitance-on-resistance product; output voltage; switching frequency; thin-film SOI power MOSFET; CMOS process; Capacitance; DC-DC power converters; MOSFET circuits; Power MOSFET; Switches; Switching converters; Switching frequency; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702656

Filename

702656