A dynamic ferroelectric capacitance model for circuit simulators

Author

Kuhn, C. ; Honigschmid, H. ; Kowarik, O. ; Gondro, E. ; Hoffmann, K.

Author_Institution

Inst. of Electron., Univ. der Bundeswehr Munchen, Neubiberg, Germany

Volume

2

fYear

2000

fDate

2000

Firstpage

695

Abstract

A dynamic model has been developed that is based on the Preisach approach for ferroelectric capacitors. It accounts for different switching reaction of the dipoles dependent on the applied voltage gradients. A method for extracting the necessary parameters by measuring the coercive voltage versus applied frequency is provided. The model was verified by testing capacitors of different geometries. Excellent agreement was achieved between our measurements and the corresponding circuit simulations. The simulation of a FeRAM-cell with our new dynamic model shows that the bit line signal decreases substantially with fast read/write times

Keywords

circuit simulation; dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; FeRAM-cell; Preisach approach; applied voltage gradients; bit line signal; circuit simulators; coercive voltage versus applied frequency; dipoles; dynamic ferroelectric capacitance model; dynamic model; fast read/write times; ferroelectric capacitors; geometries; switching reaction; Capacitance; Capacitors; Circuit simulation; Ferroelectric materials; Frequency dependence; Frequency measurement; Hysteresis; Polarization; Size measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.942415

Filename

942415