Title :
Stress analysis of SiO2/Ta/Pt/PZT/Pt stack for MEMS application
Author :
Zakar, E. ; Polcawich, R. ; Dubey, M. ; Pulskamp, J. ; Piekarski, B. ; Conrad, J. ; Piekarz, R.
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
Stress analysis of accumulated, individual, and removed layer stress was performed for the Si/SiO2/Ta/Pt/PZT/Pt stack consisting of sol-gel deposited lead zirconate titinate (PZT 52/48) thin films. The final accumulated stress of the stack normalized to a tensile value of 175 MPa. The as-deposited condition of the individual layers SiO2, top and bottom Pt layers were initially compressive but changed to tensile after annealing. The stress of the removed layer (induced stress) was relatively high for the bottom Pt layer
Keywords :
annealing; lead compounds; micromechanical devices; piezoelectric thin films; sol-gel processing; stress analysis; MEMS device; Si-SiO2-Ta-Pt-PbZrO3TiO3-Pt; Si-SiO2-Ta-Pt-PZT-Pt; SiO2/Ta/Pt/PZT/Pt stack; accumulated layer; annealing; individual layer; piezoelectric thin film; removed layer; sol-gel deposition; stress analysis; Annealing; Compressive stress; Micromechanical devices; Nitrogen; Plasma temperature; Residual stresses; Silicon; Stress measurement; Substrates; Tensile stress;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942430
