Title :
The shape of sapphire wafer on the epitaxial growth of GaN layers
Author :
Kim, Jung-Hyo ; Kim, Seung-Jin ; Lee, Seung-Jae ; Kwon, Ah-Ram
Author_Institution :
Korea Institute of Industrial Technology, 1274, Jisa-dong Gangseo-gu, Busan 618-230, Korea
Abstract :
A sapphire wafer is the well-know substrate in the application of LED chips. As the size of wafer become lager, BOW and TTV of wafers can affect more to the growth of GaN epi-layer. The quality of the GaN epi-layers and optical properties on various shapes of 4″ and 6″ Al2O3(0001) wafers were investigated. 3 types of wafers were used in BOW ranges of ±10µm. In the experimental rages of BOW, structural quality of thin film and optical properties don´t have significant difference.
Keywords :
Gallium nitride; Optical films; Quantum well devices; Substrates; Thermal expansion; Wavelength measurement;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155401
