DocumentCode :
3364860
Title :
Dielectric properties of irradiated PMN-PT/P(VDF-TrFE) 0-3 composites
Author :
Bai, Y. ; Cheng, Z.-Y. ; Bharti, V. ; Xu, H.S. ; Zhang, Q.M.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
797
Abstract :
A new polymer-ceramic composite, using the newly developed relaxor ferroelectric polymer that has a high room temperature dielectric constant as the matrix, is reported. It was observed that the increase of the dielectric constant of the composites with the ceramic content could be described quite well by the expression developed by Yamada et al. The experimental data show that the relative dielectric constant of composites using PMN-PT powders can reach more than 250 with weak temperature dependence. In addition, the composite prepared in a clean environment also has high breakdown field strength (120 MV/m), which yields an energy storage density more than 15J/cm3. The dielectric behavior of the composite at various frequencies was also studied and the results show that the material is promising for high frequency applications
Keywords :
electric breakdown; electron beam effects; ferroelectric materials; filled polymers; lead compounds; permittivity; PMN-PT powder; PMN-PT/P(VDF-TrFE) 0-3 composite; PMN-PbTiO3; PbMgO3NbO3-PbTiO3; breakdown field strength; dielectric constant; dielectric properties; electron irradiation; energy storage density; polymer-ceramic composite; relaxor ferroelectric polymer; temperature dependence; Ceramics; Dielectric constant; Electric breakdown; Energy storage; Frequency; High-K gate dielectrics; Polymers; Powders; Relaxor ferroelectrics; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.942439
Filename :
942439
Link To Document :
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