Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Author

Masumoto, H. ; Tohma, T. ; Goto, T. ; Smirnova, T. ; Masuda, Y. ; Hirai, T.

Author_Institution

Inst. of Mater. Res., Tohoku Univ., Sendai, Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

841

Abstract

BaTO₃ films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt-coated fused silica and (100)MgO substrates. Ba(DPM)₂ and Ti(O-i-C₃H₇)₂(DPM)₂ were used as Ba and Ti sources, respectively. BaTiO₃ films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO₃ films increased with decreasing total pressure. BaTiO₃ polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature

Keywords

MOCVD coatings; barium compounds; dielectric losses; electrical resistivity; ferroelectric thin films; grain size; permittivity; 0.2 to 0.8 kPa; 973 K; BaTO₃; BaTiO₃ ferroelectric thin film; MOCVD; MgO(100) substrate; Pt-coated fused silica substrate; dielectric constant; dielectric properties; electrical resistivity; grain size; loss tangent; polycrystalline phase; Barium; Chemicals; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; MOCVD; Silicon compounds; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.942449

Filename

942449