• DocumentCode
    33652
  • Title

    High Density Solenoidal Series Pair Symmetric Inductors and Transformers

  • Author

    Vanukuru, Venkata Narayana Rao ; Chakravorty, Anjan

  • Author_Institution
    Semicond. R&D Center, IBM India Pvt. Ltd., Bangalore, India
  • Volume
    61
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    2503
  • Lastpage
    2508
  • Abstract
    A high density symmetric inductor using a novel combination of solenoidal wound series stacked spirals is proposed in this paper. Series stacking in the individual sections increases overall inductance density, while solenoidal winding pushes the quality factors (Q) to higher frequencies. The proposed inductor achieves more than 65% improvement in peak-Q value and 100% higher peak-Q frequency and self resonance frequency, while occupying 20% lesser area when compared with a standard symmetric inductor with crossovers. Implemented in a high resistivity 0.18 μm CMOS silicon-on-insulator process with dual-thick metal stack, the proposed inductor achieves 70-nH inductance and a Q of 11.3 operating at 1.6 Gilz within 250 × 250 μm2 area. This translates to a record figure-of-merit of 12.2, which is highest in air core symmetric inductor literature. Further, the proposed inductor configuration is extended to realize a planar transformer with very high turns ratio of 9.25 using only two metals.
  • Keywords
    CMOS integrated circuits; Q-factor; inductors; silicon-on-insulator; solenoids; transformers; CMOS silicon-on-insulator process; figure-of-merit; frequency 1.6 GHz; high density solenoidal series pair symmetric inductors; inductance density; quality factors; series stacking; size 0.18 mum; solenoidal winding; solenoidal wound series stacked spirals; transformers; Capacitance; Conductivity; Inductance; Inductors; Metals; Silicon; Spirals; Inductance density; quality factor; silicon-on-insulator (SOI); solenoidal winding; symmetric inductor; symmetric transformer; symmetric transformer.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2323357
  • Filename
    6824756