Title :
Spurious microwave frequency range resonance in PZT/silicon FRAM-like devices written and read with a nanolithography process
Author :
Gutier, B. ; Ballandras, S. ; Thibaud, C. ; Hauden, D. ; Labrune, J.-C. ; Charraut, D. ; Daniau, W.
Author_Institution :
Centre de Recherche sur les Ecoulements, les Surfaces et les Transferts, CNRS, Montbeliard, France
Abstract :
Ferroelectric domains in thin films deposited on a silicon or glass substrate are realized using a modified AFM apparatus, also capable of implementing a so-called "piezoresponse" working mode to access the corresponding polarization distribution. Definition and control of complicated 2D patterns are performed on PZT/Ti-Pt/Si samples obtained by a sol-gel technique. The analysis of possible parasitic effects due to acoustic propagation is presented in a simplified 2D configuration. Theoretical calculations are performed using a home-made finite elements model. Frequencies at which spurious response may arise are defined for a standard structure
Keywords :
atomic force microscopy; dielectric polarisation; electric domains; elemental semiconductors; ferroelectric storage; ferroelectric thin films; finite element analysis; lead compounds; lithography; nanotechnology; platinum; silicon; sol-gel processing; titanium; 2D configuration; 2D patterns; FRAM-like devices; PZT-Ti-Pt-Si; PZT/Ti-Pt/Si; PbZrO3TiO3-Ti-Pt-Si; acoustic propagation; ferroelectric domains; ferroelectric thin films; finite elements model; modified AFM apparatus; nanolithography process; parasitic effects; piezoresponse working mode; polarization distribution; sol-gel technique; spurious microwave frequency range resonance; Acoustic propagation; Ferroelectric materials; Finite element methods; Glass; Microwave frequencies; Polarization; Resonance; Semiconductor thin films; Silicon; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942454