• DocumentCode
    3365230
  • Title

    Anodic bonding technology of slender glass tube and silicon in pressure sensor packaging

  • Author

    Tao Chen ; Lining Sun ; Mingqiang Pan ; Yangjun Wang ; Jizhu Liu ; Liguo Chen

  • Author_Institution
    Robot. & Microsyst. Center, Soochow Univ., Suzhou, China
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    813
  • Lastpage
    816
  • Abstract
    Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system (MEMS). Because of large bonding strength and simple process, silicon-glass anodic bonding is popular in piezoresistive pressure sensor. In order to improve sensors performance, the glass tube is designed to be elongated and slender. However, the special design brings difficulty for anodic bonding. The traditional bonding way is unavailable and bonding failure rate increases dramatically. In this paper, the bonding process of slender glass tube and silicon is present, and a novel bonding device is designed based on the silicon-glass bonding process. The results show that the bonding is the best when the cantilever elastic deformation is less than 0.5 mm interface temperature loaded from the silicon is 415°C and the voltage 1200 V is loaded from the position H=2 mm.
  • Keywords
    cantilevers; elastic deformation; electronics packaging; elemental semiconductors; glass; microsensors; pressure sensors; silicon; MEMS; bonding failure rate; bonding strength; cantilever elastic deformation; microelectronicmechanical system; piezoresistive pressure sensor; pressure sensor packaging; silicon-glass anodic bonding; slender glass tube; temperature 415 degC; voltage 1200 V; Bonding; Electron tubes; Glass; Heating; Shape; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745834
  • Filename
    6745834