Title :
Fabrication technologies of InP-based digital ICs and MMICs
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
Rapid progress in multimedia communication handling a huge volume of data requires high-capacity in communication systems. Optical-fiber communication systems and millimeter-wave radio communication systems will play decisive roles, and essential high-speed digital ICs and MMICs will be the key devices in these systems. The InP-based heterostructure electron devices, such as HEMTs and HBTs, are thought to be the most promising candidates for these applications. To date, ultimate high f T and fmax were well demonstrated using HEMTs based on InP. Consequently, much effort is being devoted to millimeter-wave, baseband, and digital applications. This paper reviews fabrication technologies our laboratory has developed for making 0.1-μm-gate InP-based HEMTs to realize high-performance ICs
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect digital integrated circuits; indium compounds; integrated circuit technology; optical communication equipment; radio equipment; HEMTs; InP; MMICs; baseband applications; digital ICs; fabrication technologies; heterostructure electron devices; millimeter-wave radio communication systems; multimedia communication; optical-fiber communication systems; Electron optics; HEMTs; High speed optical techniques; MMICs; MODFETs; Millimeter wave communication; Millimeter wave technology; Multimedia communication; Multimedia systems; Optical device fabrication;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491932
