Fabrication technologies of InP-based digital ICs and MMICs

Author

Ishii, Yasunobu

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

53

Lastpage

56

Abstract

Rapid progress in multimedia communication handling a huge volume of data requires high-capacity in communication systems. Optical-fiber communication systems and millimeter-wave radio communication systems will play decisive roles, and essential high-speed digital ICs and MMICs will be the key devices in these systems. The InP-based heterostructure electron devices, such as HEMTs and HBTs, are thought to be the most promising candidates for these applications. To date, ultimate high f _T and f_max were well demonstrated using HEMTs based on InP. Consequently, much effort is being devoted to millimeter-wave, baseband, and digital applications. This paper reviews fabrication technologies our laboratory has developed for making 0.1-μm-gate InP-based HEMTs to realize high-performance ICs

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect digital integrated circuits; indium compounds; integrated circuit technology; optical communication equipment; radio equipment; HEMTs; InP; MMICs; baseband applications; digital ICs; fabrication technologies; heterostructure electron devices; millimeter-wave radio communication systems; multimedia communication; optical-fiber communication systems; Electron optics; HEMTs; High speed optical techniques; MMICs; MODFETs; Millimeter wave communication; Millimeter wave technology; Multimedia communication; Multimedia systems; Optical device fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491932

Filename

491932