Design, assessment and modeling of an integrated 0.4 µm SiGe Bipolar VCSEL driver under γ-radiation

Author

Leroux, P. ; De Cock, W. ; Van Uffelen, M. ; Steyaert, M.

Author_Institution

ICT-RELIC Div., Katholieke Hogeschool Kempen, Geel, Belgium

fYear

2008

fDate

10-12 Sept. 2008

Firstpage

53

Lastpage

58

Abstract

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4μm, which is part of the device library in a commercial 0.35μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; SPICE; driver circuits; gamma-rays; heterojunction bipolar transistors; integrated circuit design; radiation effects; surface emitting lasers; γ-radiation; HBT; SPICE model; SiGe; SiGe BiCMOS technology; SiGe bipolar VCSEL driver; emitter width; heterojunction bipolar transistor; irradiation; size 0.1 micron; size 0.35 micron; static measurement; vertical cavity surface-emitting laser; Current measurement; Driver circuits; Radiation effects; SPICE; Silicon germanium; Transistors; Vertical cavity surface emitting lasers; IC design; SiGe HBT; VCSEL driver; gamma-radiation; radiation hard; total dose effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on

Conference_Location

Jyvaskyla

ISSN

0379-6566

Print_ISBN

978-1-4577-0481-9

Type

conf

DOI

10.1109/RADECS.2008.5782683

Filename

5782683