Electrical properties of PZT thin films on Al-Ti electrodes

Author

Blanco, O. ; Heiras, J.L. ; Siqueiros, J.M.

Author_Institution

CICESE, Univ. Nacional Autonoma de Mexico, Mexico City, Mexico

Volume

2

fYear

2000

fDate

2000

Firstpage

889

Abstract

Pb(Zr_0.53Ti_0.47)O₃ thin films, with the morphotropic phase boundary (MPB) composition, were successfully grown on (111) silicon substrates by a high oxygen pressure RF sputtering technique, which is used for the preparation of HTS thin films. Underlayers of Ti and Al were evaporated on the (111) oxidized Si wafers and then subjected to an annealing process before the ferroelectric thin film was deposited. The best structural characteristics were found for the annealing temperature of 600°C and a deposition temperature of 450°C. For these conditions a perovskite structure with (011) and (110) preferential orientations was obtained. The films show a peak in the dielectric constant at 380°C, near the Curie temperature for PZT in the MPB composition, and a slim hysteresis loop with Pr ≈ 2 μC/cm² and Ec ≈ 25 kV/cm at 3V

Keywords

aluminium alloys; annealing; dielectric hysteresis; electrodes; ferroelectric Curie temperature; ferroelectric thin films; lead compounds; permittivity; sputtered coatings; titanium alloys; (111) silicon substrate; 3 V; 450 C; 600 C; Al-Ti; Al-Ti electrode; Curie temperature; PZT; PZT ferroelectric thin film; PbZrO3TiO3; RF sputtering; Si; annealing; dielectric constant; electrical properties; hysteresis loop; morphotropic phase boundary; perovskite phase; preferential orientation; structural characteristics; Annealing; Electrodes; Ferroelectric materials; High temperature superconductors; Radio frequency; Semiconductor thin films; Silicon; Sputtering; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.942460

Filename

942460