• DocumentCode
    3365752
  • Title

    Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1-x)O3 thin films prepared by metalorganic chemical vapor deposition

  • Author

    Funakubo, H. ; Nagashima, Kmiharu ; Aratani, Masanon

  • Author_Institution
    Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    953
  • Abstract
    Epitaxial PZT films with (001)- and (100)-, (101)-,(110)- and (111)-orientations were grown on (100)SrRuO3//(100)SrTiO3, (110)SrRuO3//(110)SrTiO3 and (111)SrRuO3//(111)SrTiO3 substrates, respectively. The two composition films with Zr/(Zr+Ti) ratios of 0.42 and 0.68 were prepared with the Pb/(Pb+Zr+Ti) ratio of 0.5. Well-saturated and good square shape hysteresis loops with a large ferroelectricity of the remanent polarization (Pr) above 40 μC/cm2 were observed for all films. The Pr increased in the following order: (101)-, (111)- and (001)-orientations for the film with the Zr/(Zr+Ti) ratio of 0.42 and (100)-, (110)- and (111)-orientations for the Zr/(Zr+Ti) ratio of 0.68. On the other hand, the Ec value mainly depended on the Zr/(Zr+Ti) ratio and not on the orientation of the film, the Ec value of the film with a Zr/(Zr+Ti) ratio of 0.42 was larger than that of 0.68. The saturation behavior did not strongly depend on the orientation, especially for the films with the Zr/(Zr+Ti) ratio of 0.42. The (101)-oriented film with the Zr/(Zr+Ti) ratio of 0.42 and (100)- and (111)-oriented films with 0.68 did not show deterioration up to 1010 switching cycles
  • Keywords
    MOCVD; X-ray diffraction; dielectric hysteresis; dielectric polarisation; ferroelectric switching; ferroelectric thin films; lead compounds; Ec value; PZT; PbZrO3TiO3; SrRuO3-SrTiO3; coercive field; epitaxial PZT film; ferroelectric switching; ferroelectricity; metalorganic chemical vapor deposition; orientation dependence; remanent polarization; saturation behavior; square shape hysteresis loops; Chemical vapor deposition; MOCVD; Polarization; Shape; Solids; Sputtering; Substrates; Transistors; X-ray scattering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942476
  • Filename
    942476