Title :
Influence of Nb additive on the properties of lead titanate thin film
Author :
Ohno, T. ; Fu, D.S. ; Ogawa, T. ; Suzuki, H. ; Ishikawa, K.
Author_Institution :
Dept. of Material Sci., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Thin films of Nb-doped PbTiO3 (PNT) were formed on Pt-coated Si by chemical solution deposition. The substitution of Nb for the Ti-site has been shown by the changes in profile of the lattice vibration related to the Ti cation. We have studied the influence of Nb additive on the structure, surface morphology and properties of the PNT film. The tetragonality of the film decreases with increasing Nb content. The dielectric constants of the films displayed strong frequency dependence. Although the Nb addition leads to the decrease in the polarization for PNT film, it effectively improves the properties of leakage current
Keywords :
Raman spectra; atomic force microscopy; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; leakage currents; niobium; permittivity; phonon spectra; surface topography; Nb additive effects; Nb-doped PNT; PbTiO3:Nb; Si; Si-Pt; chemical solution deposition; dielectric constant; dielectric polarization; film structure; film tetragonality; frequency dependence; lattice vibration; lead titanate thin film; leakage current; surface morphology; Additives; Chemicals; Dielectric constant; Lattices; Lead; Niobium; Semiconductor thin films; Sputtering; Surface morphology; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942493
