Preparation and properties of Bi-system perovskite oxide thin films by sputtering method

Author

Watanabe, Masaru ; Ichinose, Noboru

Author_Institution

Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

969

Abstract

Ferroelectric (Bi_0.5Na_0.5)TiO₃ thin films were synthesized on various kinds of substrates such as MgO(100), glass and Pt/MgO(100) by the rf-magnetron sputtering technique. Single perovskite thin films were prepared on MgO(100) and Pt/MgO(100). The films deposited on MgO(100) and Pt/MgO(100) substrates showed an a-axis orientation. The film obtained on Pt/MgO(100) at a substrate temperature of 500°C, using a (Bi_0.50Na_0.75)TiO₃ powder target had P _r of 2.3 μC/cm² and E_c of 20 kV/cm. The hysteresis loop of the film did not change up to 3 × 10⁶ switching cycles

Keywords

X-ray diffraction; bismuth compounds; dielectric hysteresis; dielectric polarisation; ferroelectric switching; ferroelectric thin films; piezoceramics; sodium compounds; sputter deposition; sputtered coatings; 500 degC; Bi-system perovskite oxide thin film; Bi_0.5Na_0.5TiO₃; E_c; MgO; P_r; Pt-MgO; a-axis orientation; ferroelectric polarisation; ferroelectric switching; ferroelectric thin films; glass substrate; hysteresis loop; rf-magnetron sputtering technique; single perovskite thin films; Ceramics; Electrodes; Ferroelectric films; Ferroelectric materials; Glass; Piezoelectric films; Powders; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.942494

Filename

942494