Title :
Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)
Author :
Barthelmess, R. ; Beuermann, M. ; Metzner, D. ; Schmidt, G. ; Westerholt, D. ; Winter, N. ; Gerstenmaier, Y.C. ; Reznik, D. ; Ruff, M. ; Schulze, H.-J. ; Willmeroth, A.
Author_Institution :
Eupec GmbH, Pretzfeld, Germany
Abstract :
Semi-insulating amorphous hydrogenated carbon layers are the key to use of the potential of the punchthrough design for high power semiconductors. The reduction of device thickness enables reduction of device losses with unchanged blocking capability. The concept is especially successful for GTO thyristors and their corresponding diodes, where new applications in the 5 to 500 MW range have emerged
Keywords :
amorphous semiconductors; carbon; hydrogen; losses; passivation; power semiconductor diodes; thyristors; 5 to 50 MW; C:H; GTO thyristor diodes; GTO thyristors; a-C:H layers; blocking capability; device losses; device thickness; electroactive passivation; hydrogenated amorphous carbon layers; power semiconductor devices; power semiconductors; punchthrough design; semi-insulating amorphous hydrogenated carbon layers; Amorphous materials; Conductivity; Design optimization; Passivation; Power semiconductor devices; Schottky diodes; Semiconductor diodes; Silicon; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702664
