Title :
3-bit, 8 GSPS flash ADC
Author :
Baringer, Cynthia ; Jensen, Joe ; Burns, Larry ; Walden, Bob
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
A 3-bit multi-Gigasamples/sec (Gs/s) flash analog-to-digital converter (ADC) for high-speed data acquisition systems is reported in this paper. Nyquist operation up to 8 Gs/s has been achieved. The quantizer can convert analog input signals beyond fs/2 up to fs at a sampling rate of 5 Gs/s. In addition, the converter can be operated up to 12.7 Gs/s when the input signal is at low frequencies. This ADC is fabricated in an AlInAs-GaInAs HBT process fabricated on InP substrates with an fT of 75 GHz and fmax of 85 GHz
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; 3 bit; 75 GHz; 85 GHz; AlInAs-GaInAs; AlInAs-GaInAs HBT process; InP substrates; Nyquist operation; analog-to-digital converter; flash ADC; high-speed data acquisition systems; quantizer; Bandwidth; Breakdown voltage; DH-HEMTs; Frequency; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Photonic band gap; Signal sampling; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491935
