DocumentCode :
3366
Title :
Enhanced 1524-nm Emission From Ge Quantum Dots in a Modified Photonic Crystal L3 Cavity
Author :
Yong Zhang ; Cheng Zeng ; Danping Li ; Zengzhi Huang ; Kezheng Li ; Jinzhong Yu ; Juntao Li ; Xuejun Xu ; Maruizumi, Takuya ; Jinsong Xia
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume :
5
Issue :
5
fYear :
2013
fDate :
Oct. 2013
Firstpage :
4500607
Lastpage :
4500607
Abstract :
Light emitters based on Ge quantum dots embedded in modified photonic crystal three defect-long (L3) cavities are fabricated and characterized. Several sharp resonant luminescence peaks dominate the photoluminescence (PL) spectrum at room temperature. The strongest resonant luminescence peak is obtained at 1524 nm. The enhancement factor is 110, and the corresponding Purcell factor is estimated to be 6.7. The large enhancement is due to high Purcell factor and high collection efficiency of modified L3 cavity verified by far-field patterns. The intrinsic Q factor measured from crossed-polarized resonant scattering is much higher than the Q factor measured from PL, indicating that the Q factors measured from PL are inaccurate due to free-carrier absorption of the photogenerated carriers.
Keywords :
elemental semiconductors; germanium; light emitting devices; microcavities; photoluminescence; photonic crystals; semiconductor quantum dots; 1524-nm emission; Ge; Purcell factor; crossed-polarized resonant scattering; far-field patterns; free-carrier absorption; intrinsic Q factor; light emitters; modified photonic crystal three defect-long cavities; photogenerated carriers; photoluminescence spectrum; photonic crystal L3 cavity; quantum dots; resonant luminescence peaks; temperature 293 K to 298 K; wavelength 1524 nm; Cavity resonators; Light emitting diodes; Photonic crystals; Q measurement; Q-factor; Quantum dots; Silicon; Photonic crystals; light-emitting diodes; microcavity devices; quantum dots devices;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2280525
Filename :
6595048
Link To Document :
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