Title :
Characteristics of metal-LiNbO3-Si for a single transistor FRAM
Author :
Moon, Sang-Il ; Lim, Dong-Gun ; Jang, Bum-Sik ; Yi, Junsin
Author_Institution :
Sch. of Electr. & Comput. Eng., Sungkyunkwan Univ., Kyunggi-do, South Korea
Abstract :
This paper investigated LiNbO3 thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for a single transistor FRAM application. Thin film LiNbO3 showed improved characteristics of a low interface trap density, low interaction with Si substrate, and large remanent polarization. Low temperature film growth and post RTA treatments improved the leakage current of the films while keeping other properties almost the same as high substrate temperature grown samples. We learned that the RTA annealed films were changed from amorphous to multicrystalline LiNbO3 with (012), (015), (022), and (023) planes. P-E characteristics were studied in conjunction with C-V properties of MFS capacitors. This paper reports the LiNbO3 film with the following parameters dielectric constant of εr =27.9, remanent polarization 2Pr=2.7μC/cm2, and coercive field Ec=170kV/cm
Keywords :
MIS structures; dielectric polarisation; ferroelectric storage; ferroelectric thin films; interface states; leakage currents; lithium compounds; permittivity; random-access storage; rapid thermal annealing; silicon; sputter deposition; sputtered coatings; 13.56 MHz; C-V properties; LiNbO3 thin films; LiNbO3-Si; MFS capacitors; RF magnetron sputtering; RTA annealed films; Si; Si (100) substrates; coercive field; dielectric constant; interface trap density; leakage current; low temperature film growth; metal-LiNbO3-Si structure; multicrystalline LiNbO3; p-type Si substrates; post RTA treatments; remanent polarization; single transistor FRAM application; Amorphous magnetic materials; Ferroelectric films; Polarization; Radio frequency; Random access memory; Semiconductor thin films; Sputtering; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942503
