Title :
Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETs
Author :
Berg, M. ; Hackbarth, T. ; Maile, B.E. ; Kosslowski, S. ; Dickmann, J. ; Köther, D. ; Hopf, B. ; Hartnagel, H.L.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
An active coplanar circulator for Q-band operation based on lattice matched InAlAs/InGaAs/InP HFETs has been designed and fabricated. The active devices have a gate-width of WG=6×20 μm and T-gates with a gate-length of LG =0.25 μm. The circuit is fully passivated, contains all matching and biasing networks on chip and operates under zero volt gate bias. Over the entire frequency range the input reflection of the circulator is better than -15 dB and the isolation between the transmit and the receive path is better than -30 dB which is attributed to the extremely low feedback capacitance of the InP-based HFETs
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; coplanar waveguides; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave circulators; 0.25 micron; CPW technology; III-V semiconductors; InAlAs-InGaAs-InP; active circulator MMIC; biasing networks; feedback capacitance; fully passivated circuit; input reflection; isolation; lattice matched HFETs; matching networks; zero volt gate bias; Circuits; Coplanar waveguides; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MMICs; MODFETs; Network-on-a-chip;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491936
