Title :
Influences of cluster related defects on silicon detector properties
Author :
Junkes, Alexandra ; Fretwurst, Eckhart ; Pintilie, Ioana
Author_Institution :
Dept. of Phys., Univ. of Hamburg, Hamburg, Germany
Abstract :
The influence of proton induced cluster defects on reverse current in n-type silicon diodes combined with annealing studies acquiring the properties of bistable cluster related defects measured by DLTS and TSC.
Keywords :
annealing; elemental semiconductors; protons; radiation effects; semiconductor diodes; silicon; DLTS; TSC; annealing; bistable cluster related defect; n-type silicon diode; proton induced cluster defect; reverse current; silicon detector; Annealing; Current measurement; Neutrons; Protons; Radiation effects; Silicon; Bistability; DLTS; TSC; electrical properties; vacancy cluster;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location :
Jyvaskyla
Print_ISBN :
978-1-4577-0481-9
DOI :
10.1109/RADECS.2008.5782768
