DocumentCode
3366236
Title
Influences of cluster related defects on silicon detector properties
Author
Junkes, Alexandra ; Fretwurst, Eckhart ; Pintilie, Ioana
Author_Institution
Dept. of Phys., Univ. of Hamburg, Hamburg, Germany
fYear
2008
fDate
10-12 Sept. 2008
Firstpage
485
Lastpage
488
Abstract
The influence of proton induced cluster defects on reverse current in n-type silicon diodes combined with annealing studies acquiring the properties of bistable cluster related defects measured by DLTS and TSC.
Keywords
annealing; elemental semiconductors; protons; radiation effects; semiconductor diodes; silicon; DLTS; TSC; annealing; bistable cluster related defect; n-type silicon diode; proton induced cluster defect; reverse current; silicon detector; Annealing; Current measurement; Neutrons; Protons; Radiation effects; Silicon; Bistability; DLTS; TSC; electrical properties; vacancy cluster;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location
Jyvaskyla
ISSN
0379-6566
Print_ISBN
978-1-4577-0481-9
Type
conf
DOI
10.1109/RADECS.2008.5782768
Filename
5782768
Link To Document