Title :
Altitude and underground real-time SER characterization of CMOS 65nm SRAM
Author :
Autran, J.L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J.
Author_Institution :
CNRS, Aix-Marseille Univ., Marseille, France
Abstract :
We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.
Keywords :
CMOS memory circuits; SRAM chips; CMOS; SRAM memories; real-time SER characterization; single event rate; Acceleration; Laboratories; Materials; Monitoring; Neutrons; Random access memory; Real time systems; SER simulation; Single-Event Rate (SER); accelerated tests; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; static memory; terrestrial radiation environment;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location :
Jyvaskyla
Print_ISBN :
978-1-4577-0481-9
DOI :
10.1109/RADECS.2008.5782774
