• DocumentCode
    3366299
  • Title

    Altitude and underground real-time SER characterization of CMOS 65nm SRAM

  • Author

    Autran, J.L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J.

  • Author_Institution
    CNRS, Aix-Marseille Univ., Marseille, France
  • fYear
    2008
  • fDate
    10-12 Sept. 2008
  • Firstpage
    519
  • Lastpage
    524
  • Abstract
    We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.
  • Keywords
    CMOS memory circuits; SRAM chips; CMOS; SRAM memories; real-time SER characterization; single event rate; Acceleration; Laboratories; Materials; Monitoring; Neutrons; Random access memory; Real time systems; SER simulation; Single-Event Rate (SER); accelerated tests; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; static memory; terrestrial radiation environment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
  • Conference_Location
    Jyvaskyla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0481-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2008.5782774
  • Filename
    5782774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3366299