Title :
4.5 kV high-speed and rugged planar diode with novel carrier distribution control
Author :
Matsushita, Ken-ichi ; Shinohe, Takashi ; Tsukuda, Masanori ; Minami, Yoshihiro ; Miwa, Jun-ichi ; Yanagisawa, Satoshi ; Ohashi, Hiromichi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
This paper reports on the development of a 4.5 kV diode with superior reverse recovery characteristics and ruggedness. The carrier distribution of the diode is controlled by the new p-emitter structure and the optimized local lifetime control on anode and cathode sides. Maximum reverse recovery current 35% lower and tail time 50% smaller than those of a conventional p-i-n diode have been obtained. The diode has excellent ruggedness, being able to withstand 300 A/cm2-3500 V recovery at 500 A/μs/cm2 di/dt
Keywords :
carrier density; electric current; power semiconductor diodes; semiconductor device reliability; semiconductor device testing; 3.5 kV; 4.5 kV; anode lifetime control; carrier distribution; carrier distribution control; cathode lifetime control; diode ruggedness; high-speed planar diode; optimized local lifetime control; p-emitter structure; p-i-n diode; power diode; reverse recovery characteristics; reverse recovery current; rugged planar diode; tail time; Anodes; Cathodes; Laboratories; Low voltage; P-i-n diodes; Schottky diodes; Semiconductor devices; Semiconductor diodes; Switching loss; Tail;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702666
