The First All-Transistor Wideband (0 - 5GHz) Impedance Matching Network

Author

Godara, Balwant ; Fabre, Alain

Author_Institution

Inst. Superieur d´´Electron. de Paris (ISEP), Paris

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1217

Lastpage

1219

Abstract

The first active impedance matching circuit for RF applications is introduced. It adapts arbitrary output impedances to values between 50Â¿ and 250Â¿, from 0 to 5GHz, and occupies only 0.005mm² in 0.35Â¿m SiGe-BiCMOS. It is vastly superior to traditional passive-element solutions by being: the first flexible matching circuit to adapt any impedance to any desired value; the smallest matching circuit ever; and a rare example of wideband matching. Application to a low-noise amplifier proves the potential of the new circuit.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; impedance matching; semiconductor materials; RF applications; SiGe; SiGe-BiCMOS; all-transistor wideband; frequency 0 GHz to 5 GHz; impedance matching network; low-noise amplifier; matching circuit; size 0.35 mum; Circuit noise; Flexible printed circuits; Impedance matching; Noise figure; Radio frequency; Reflection; Scattering parameters; Temperature; Transformers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-1377-5

Electronic_ISBN

978-1-4244-1378-2

Type

conf

DOI

10.1109/ICECS.2007.4511215

Filename

4511215