DocumentCode
3366693
Title
Interpretation of switching data in oxide resistive switching thin films
Author
Yoo, In K. ; Kim, Jong W. ; Kim, Kwon Y.
Author_Institution
Samsung Adv. Inst. of Technol., Samsung Electron., Suwon, South Korea
fYear
2015
fDate
24-27 May 2015
Firstpage
230
Lastpage
232
Abstract
The overall research status of resistive switching thin films was reviewed in conjunction with patents in order to find a guideline for prospective commercial applications. Oxide resistive switching applications may be repositioned toward extreme devices such as reconfigurable logic. Further research opportunities may be found in the field of the perfect conductor-insulator transition materials design by applying materials informatics.
Keywords
electrical conductivity transitions; resistive RAM; switching; thin films; RRAM; materials informatics; oxide resistive switching thin films; perfect conductor-insulator transition materials design; reconfigurable logic; switching data; Commercialization; Informatics; Patents; Portfolios; Reconfigurable logic; Resistance; Switches; Computational materials design; Data driven materials design; Materials informatics; RRAM; Resistive switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location
Singapore
Type
conf
DOI
10.1109/ISAF.2015.7172713
Filename
7172713
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