Title :
1.55 μm p-i-n/HBT photoreceiver in a high-frequency optical phase-locked loop for stable dense wavelength division multiplexing channel offsets
Author :
Goetz, P. ; Eisele, H. ; Syao, K. ; Bhattacharya, P.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this work, an integrated p-i-n photoreceiver (PR) was employed in an optical phase-locked loop (OPLL) designed for producing stable channel offsets for extremely dense WDM systems. Wavelength separations from 3.00 to beyond 27.11 GHz were generated, representing the highest locking frequency reported for any heterodyne OPLL with semiconductor lasers. These offsets generated are well beyond the best values currently obtainable by passive filtering techniques
Keywords :
bipolar integrated circuits; demodulation; integrated optoelectronics; optical modulation; optical phase locked loops; optical receivers; p-i-n photodiodes; photodetectors; stability; wavelength division multiplexing; extremely dense WDM systems; high-frequency optical phase-locked loop; integrated p-i-n photoreceiver; locking frequency; optical phase-locked loop; p-i-n/HBT photoreceiver; passive filtering techniques; semiconductor lasers; stable channel offsets; stable dense wavelength division multiplexing channel offsets; wavelength separations; Frequency; Heterojunction bipolar transistors; Integrated optics; Optical design; Optical filters; Optical mixing; PIN photodiodes; Phase locked loops; Ultraviolet sources; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630588
