Title :
Temperature instability of amorphous In-Ga-Zn-O thin film transistors
Author :
Yih-Shing Lee ; Sheng-Kai Fan ; Chii-Wen Chen ; Tung-Wei Yen ; Horng-Chih Lin
Author_Institution :
Dept. of Optoelectron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsin-Chu, Taiwan
Abstract :
In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.
Keywords :
dielectric materials; gallium; indium; oxygen; plasma CVD; thin film transistors; zinc; In-Ga-Zn-O; PECVD; SS; TEOS oxide; TFT; amorphous thin film transistors; dielectric material; plasma-enhanced chemical vapor deposition; subthreshold current; subthreshold swing; temperature instability; tetraethylorthosilicate oxide; thermally activated electrons; Logic gates; Plasma temperature; Semiconductor device measurement; Temperature; Temperature dependence; Temperature measurement; Thin film transistors; In-Ga-Zn-O; PECVD TEOS; sub-threshold swing; temperature Instability; thermal activation energy;
Conference_Titel :
Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4799-0464-8
DOI :
10.1109/ICAIT.2013.6621529
