6 kV/4 kA gate commutated turn-off thyristor with operation DC voltage of 3.6 kV

Author

Satoh, K. ; Nakagawa, T. ; Yamamoto, M. ; Morishita, K. ; Kawakami, A.

Author_Institution

Power Device Div., Mitsubishi Elec. Corp., Fukuoka City, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

205

Lastpage

208

Abstract

Recently, a 4.5 kV/4 kA gate commutated turn-off thyristor (GCT) has been successfully introduced to the market. The GCT is a new high power device which has not only the same high blocking capability and low on-state voltage as the GTO, but also the same high turn-off performance as the IGBT. In order to ascertain the possibility of GCT use in higher voltage areas, a 6 kV/4 kA GCT with a DC operating voltage of 3.6 kV (long term DC stability of 100 FIT) has been developed by the adoption of the PT structure and local lifetime control, and has been evaluated. The results achieved indicated that the GCT may become a main high power device for high power applications

Keywords

carrier lifetime; high-voltage techniques; semiconductor device testing; stability; thyristors; 3.6 kV; 4 kA; 4.5 kV; 6 kV; DC operating voltage; GCT thyristor; GCT voltage; PT structure; blocking capability; gate commutated turn-off thyristor; local lifetime control; long term DC stability; on-state voltage; power device; turn-off performance; Anodes; Cathodes; Cities and towns; Inductance; Insulated gate bipolar transistors; Low voltage; Packaging; Power engineering and energy; Snubbers; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702669

Filename

702669