Title : 
Evaluation of the yield impact of epitaxial defects on advanced semiconductor technologies
         
        
            Author : 
Williams, Ross ; Chen, Weijie ; Akbulut, M.
         
        
            Author_Institution : 
Intel Corp., Rio Rancho, NM
         
        
        
        
        
        
            Abstract : 
The SPITB1 defect inspection system was used to inspect epitaxial wafers for an advanced semiconductor manufacturing process to distinguish particles from epitaxial defects (e.g., stacking faults, epi-spikes, mounds, hillocks, and pits) using real-time defect classification (RTDC). The project results indicate that the enhanced defect sensitivity, better capture rate, and the RTDC capabilities of the SPI inspection system can provide a significant improvement in the current defect inspection capabilities for epitaxial wafers. Historical results, from in-line defect inspections on product wafers, have shown that epitaxial defects can have a significant impact on the product yields of advanced semiconductor technologies
         
        
            Keywords : 
crystal defects; elemental semiconductors; inspection; integrated circuit yield; semiconductor epitaxial layers; silicon; stacking faults; SPITB1 defect inspection system; Si; advanced semiconductor technologies; capture rate; defect sensitivity; epi-spikes; epitaxial defects; hillocks; mounds; pits; product wafers; product yields; real-time defect classification; stacking faults; Bipolar transistors; CMOS technology; Crystallization; Electronics industry; Inspection; Real time systems; Semiconductor device manufacture; Silicon; Stacking; Substrates;
         
        
        
        
            Conference_Titel : 
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
         
        
            Conference_Location : 
Santa Clara, CA
         
        
        
            Print_ISBN : 
0-7803-5403-6
         
        
        
            DOI : 
10.1109/ISSM.1999.808749