DocumentCode
3367080
Title
Non-defective area analysis for quantifying yield impact
Author
Ono, Makoto ; Iwata, Hisafumi ; Nemoto, Kazunori ; Watanabe, Kenji
Author_Institution
Production Eng. Res. Lab., Hitachi Ltd., Japan
fYear
1999
fDate
1999
Firstpage
127
Lastpage
130
Abstract
The present paper introduces a novel yield impact quantification method which is designed especially to have robustness to clustered defects and false detection by inspection tools. The yield impact can be obtained by non-defective area analysis of cumulative defect maps. The accuracy of the proposed method is discussed based on experimental results that were obtained using actual in-line inspection data. Application of the proposed method is contributing to rapid yield ramp-up
Keywords
failure analysis; fault diagnosis; inspection; integrated circuit modelling; integrated circuit yield; LSI wafer fabrication; clustered defects; cumulative defect maps; false detection; inline inspection data; inspection tools; kill ratio analysis; nondefective area analysis; yield impact quantification method; Algorithm design and analysis; Circuits; Clustering algorithms; Failure analysis; Inspection; Laboratories; Manufacturing; Production; Robustness; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808754
Filename
808754
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