DocumentCode :
3367102
Title :
Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers
Author :
Hammar, Mattias ; Yu Xiang ; Xingang Yu ; Berggren, Jesper ; Zabel, Thomas ; Akram, Muhammad Nadeem
Author_Institution :
Sch. of Inf. & Commun. Technol, KTH - R. Inst. of Technol., Kista, Sweden
fYear :
2013
fDate :
6-9 July 2013
Firstpage :
141
Lastpage :
142
Abstract :
We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.
Keywords :
epitaxial growth; laser cavity resonators; surface emitting lasers; T-VCSEL; continuous-wave operation; epitaxial regrowth; pnp-type transistor; room-temperature operation; static performance levels; temperature 293 K to 298 K; transistor-vertical-cavity surface-emitting lasers; triple-intracavity current injection; wavelength 980 nm; Cavity resonators; Dielectrics; Distributed Bragg reflectors; Fabrication; Gallium arsenide; Photonics; Transistors; VCSEL; transistor VCSEL; transistor laser;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4799-0464-8
Type :
conf
DOI :
10.1109/ICAIT.2013.6621535
Filename :
6621535
Link To Document :
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