Implementation of the IMEC-Clean in advanced CMOS manufacturing

Author

Meuris, Marc ; Arnauts, Sophia ; Cornelissen, Ingrid ; Kenis, K. ; Lux, M. ; DeGendt, Stefan ; Mertens, Paul ; Teerlinck, I. ; Vos, R. ; Loewenstein, L. ; Heyns, M.M. ; Wolke, Klaus

Author_Institution

IMEC, Leuven, Belgium

fYear

1999

fDate

1999

Firstpage

157

Lastpage

160

Abstract

We present data measured using the wet bench in the prototyping line of IMEC. This wet bench has been running for 3 years an IMEC Clean for prediffusion cleans including the most critical one: the pre-gate oxidation clean. The clean was introduced at IMEC for the 0.35 μm CMOS process and its use has been succesfully extended to the 180 nm and 130 nm CMOS modules presently developed at IMEC

Keywords

CMOS integrated circuits; etching; integrated circuit manufacture; surface cleaning; 0.35 mum; 130 nm; 180 nm; CMOS modules; H₂SO₄-O₃; HF-HCl; IMEC-Clean concept; advanced CMOS manufacturing; deionized water; dilute HF-HCl mixture; dump rinse; etching; ozonation; pre-gate oxidation clean; prediffusion cleans; prototyping line; sulfuric acid/ozone mixture; wet bench; CMOS process; Chemicals; Chemistry; Etching; Hafnium; Human computer interaction; Instruments; Manufacturing; Silicon compounds; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808761

Filename

808761