Author :
Meuris, Marc ; Arnauts, Sophia ; Cornelissen, Ingrid ; Kenis, K. ; Lux, M. ; DeGendt, Stefan ; Mertens, Paul ; Teerlinck, I. ; Vos, R. ; Loewenstein, L. ; Heyns, M.M. ; Wolke, Klaus
Abstract :
We present data measured using the wet bench in the prototyping line of IMEC. This wet bench has been running for 3 years an IMEC Clean for prediffusion cleans including the most critical one: the pre-gate oxidation clean. The clean was introduced at IMEC for the 0.35 μm CMOS process and its use has been succesfully extended to the 180 nm and 130 nm CMOS modules presently developed at IMEC
Keywords :
CMOS integrated circuits; etching; integrated circuit manufacture; surface cleaning; 0.35 mum; 130 nm; 180 nm; CMOS modules; H2SO4-O3; HF-HCl; IMEC-Clean concept; advanced CMOS manufacturing; deionized water; dilute HF-HCl mixture; dump rinse; etching; ozonation; pre-gate oxidation clean; prediffusion cleans; prototyping line; sulfuric acid/ozone mixture; wet bench; CMOS process; Chemicals; Chemistry; Etching; Hafnium; Human computer interaction; Instruments; Manufacturing; Silicon compounds; Surface cleaning;
