Effect of carbon contamination enhanced by micro-roughness on gate oxide integrity

Author

Tsugane, Ken ; Yamagisawa, Y. ; Sakai, Satoshi ; Jimbo, Tomoko ; Tomioka, Hideki

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1999

fDate

1999

Firstpage

161

Lastpage

164

Abstract

We evaluated the effect on gate oxide integrity of increased carbon contamination due to the microroughness of the Si surface. Carbon contaminants introduced into the sacrificial oxide film during ion implantation are removed during the pre-gate oxidation cleaning, but redeposit on the surface. A rough surface has many physically and chemically active sites, so more carbon adsorbs on a rougher surface. The adsorbed carbon forms Si-C bonds during the preheating step under N ₂ ambient before the thermal oxidation process and degrades the integrity of the gate oxide

Keywords

MOS capacitors; X-ray photoelectron spectra; atomic force microscopy; carbon; oxidation; rough surfaces; surface cleaning; surface contamination; surface topography; AFM; ATR-FTIR spectra; C; C adsorption; C contamination; MOS capacitors; N₂; N₂ ambient; Si; Si surface microroughness; Si-C bonds; Si-SiO₂; XPS spectra; chemically active sites; gate oxide integrity; ion implantation; physically active sites; pre-gate oxidation cleaning; preheating step; rough surface; sacrificial oxide film; thermal oxidation process; Atomic force microscopy; Bonding; Cleaning; Hafnium; Ion implantation; MOS capacitors; Magnetic recording; Postal services; Spectroscopy; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808762

Filename

808762