Title :
UV nonvolatile sensor by using SONOS capacitor device
Author :
Wen-Ching Hsieh ; Lee, Hao-Tien Daniel ; Fuh-Cheng Jong ; Shich-Chuan Wu ; Heh, D.
Author_Institution :
Dept. of Opto-Electron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsin-Chu, Taiwan
Abstract :
The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage for SONOS by UV-assisted-low-gate-voltage program. The change of threshold voltage for SONOS after UV ray expose has a correlation to the dose of UV ray exposure. In this paper, the performance of capacitor types of SONOS used for UV sensor was studied. The data of SONOS UV radiation sensors wrote by UV-assisted-low-gate-voltage program was nonvolatile at least for 1 month. The SONOS capacitor device with ONO gate dielectric in this study has demonstrated the feasibility for UV nonvolatile sensor application.
Keywords :
capacitors; elemental semiconductors; nitrogen compounds; radiation effects; random-access storage; silicon; silicon compounds; ultraviolet detectors; ONO gate dielectrics; SONOS capacitor device; SiO2-Si3N4-SiO2-ONO-Si; UV nonvolatile sensor application; UV ray exposure; UV-assisted-low-gate-voltage program; nonvolatile ultraviolet UV radiation sensors; time 1 month; Capacitors; Electron traps; Logic gates; Photonics; SONOS devices; Threshold voltage; Capacitor; SONOS; Sensor; ultraviolet radiation;
Conference_Titel :
Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4799-0464-8
DOI :
10.1109/ICAIT.2013.6621548
