UV nonvolatile sensor by using SONOS capacitor device

Author

Wen-Ching Hsieh ; Lee, Hao-Tien Daniel ; Fuh-Cheng Jong ; Shich-Chuan Wu ; Heh, D.

Author_Institution

Dept. of Opto-Electron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsin-Chu, Taiwan

fYear

2013

fDate

6-9 July 2013

Firstpage

163

Lastpage

164

Abstract

The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage for SONOS by UV-assisted-low-gate-voltage program. The change of threshold voltage for SONOS after UV ray expose has a correlation to the dose of UV ray exposure. In this paper, the performance of capacitor types of SONOS used for UV sensor was studied. The data of SONOS UV radiation sensors wrote by UV-assisted-low-gate-voltage program was nonvolatile at least for 1 month. The SONOS capacitor device with ONO gate dielectric in this study has demonstrated the feasibility for UV nonvolatile sensor application.

Keywords

capacitors; elemental semiconductors; nitrogen compounds; radiation effects; random-access storage; silicon; silicon compounds; ultraviolet detectors; ONO gate dielectrics; SONOS capacitor device; SiO₂-Si₃N₄-SiO₂-ONO-Si; UV nonvolatile sensor application; UV ray exposure; UV-assisted-low-gate-voltage program; nonvolatile ultraviolet UV radiation sensors; time 1 month; Capacitors; Electron traps; Logic gates; Photonics; SONOS devices; Threshold voltage; Capacitor; SONOS; Sensor; ultraviolet radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on

Conference_Location

Hsinchu

Print_ISBN

978-1-4799-0464-8

Type

conf

DOI

10.1109/ICAIT.2013.6621548

Filename

6621548