Run-to-run control of CMP process considering aging effects of pad and disc

Author

Chen, Argon ; Guo, Ruey-Shan ; Chou, Y.L. ; Lin, C.L. ; Dun, Jowei ; Wu, S.A.

Author_Institution

Graduate Inst. of Ind. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1999

fDate

1999

Firstpage

229

Lastpage

232

Abstract

CMP processes are known to be erratic and unstable. A simple control strategy is to predict the run-to-run process removal rate and then adjust the processing time based on the prediction. EWMA and PCC techniques are two most often used prediction techniques. In this work, we revise the PCC design to take into account the ages of the abrasive pad and conditioning disc. It is shown that the proposed age-based technique can significantly improve the prediction capability and, thus, the control efficiency over conventional techniques

Keywords

ageing; chemical mechanical polishing; integrated circuit manufacture; moving average processes; predictive control; predictor-corrector methods; process control; CMP process; EWMA; PCC design; abrasive pad; conditioning disc; control efficiency; control strategy; disc aging effects; exponentially weighted moving average statistic; global planarization; pad aging effects; prediction capability; predictor corrector control; processing time; run-to-run control; run-to-run process removal rate; Abrasives; Aging; Atherosclerosis; Chemical technology; Planarization; Process control; Rough surfaces; Semiconductor process modeling; Statistics; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808778

Filename

808778