Title :
Influence of growth conditions on mobility and anisotropy of InyGa1-yAs/In0.52Al0.48 As/InP HEMTs with y=0.53 to 0.80
Author :
Beck, M. ; Ilegems, M.
Author_Institution :
Inst. of Micro- & Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
We have studied the mobility behaviour of HEMT structures with lattice matched and strained channels as a function of channel growth temperature and thickness. Decreasing the channel growth temperature leads to mobility reduction and anisotropy in the lattice matched system. The pseudomorphic channel shows superior mobility in the [1-10] direction compared to the [110] direction under all growth conditions, Growth at lower temperatures prevents strain relaxation and can considerably improve the mobility of pseudomorphic HEMT structures. We have measured mobilities of 14300 and 14900 cm2/Vs at electron densities of 3.1 and 2.6×1012 cm-2 for structures with strained channels
Keywords :
aluminium compounds; electron density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; stress relaxation; HEMT structures; InyGa1-yAs/In0.52Al0.48 As/InP HEMT; InGaAs-In0.52Al0.48As-InP; anisotropy; channel growth temperature; electron densities; growth conditions; lattice matched channels; lattice matched system; mobility; mobility behaviour; mobility reduction; pseudomorphic channel; strain relaxation; strained channels; Anisotropic magnetoresistance; Capacitive sensors; Density measurement; Electron mobility; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; PHEMTs; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491944
