Ion damage propagation in dry-etched InP-based structures

Author

Hu, E.L. ; Yu, D.G. ; Chen, C.H. ; Keller, B.P. ; Holmes, A.L., Jr. ; DenBaars, S.P.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

107

Lastpage

110

Abstract

The high spatial resolution, controlled etch profiles and uniformity of etching that is achievable with ion-assisted etch processes appear to be counterbalanced with ion-induced defects introduced into the material. We describe assessments of such damage introduced into InP, and propagated into material structures regrown onto those InP substrates. Particular etch chemistries, effective for patterning InP, may have capabilities of mitigating ion-generated defects

Keywords

III-V semiconductors; crystal defects; indium compounds; sputter etching; surface chemistry; surface structure; InP; controlled etch profiles; damage; dry-etched InP-based structures; etch chemistries; etching; high spatial resolution; ion damage propagation; ion-assisted etch processes; ion-generated defects; ion-induced defects; patterning; uniformity; Argon; Chemical technology; Chemistry; Dry etching; Hydrogen; Indium phosphide; Optical materials; Optical waveguides; Spatial resolution; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491946

Filename

491946