Title :
Layout-based 3D solid modeling for IC
Author :
Yu, Zhiping ; Wang, Ken ; Chen, Tao ; Dutton, Robert W. ; Watt, Jeff T.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
31 May-2 Jun 1995
Abstract :
A software system for 3D solid modeling of IC structures (devices, interconnection, and circuits) based on the layout design and processing information is described. Both the 3D perspective view and 2D cross sections of the structure can be examined using the system. Features of the system include automatic update of the geometry as the layout is changed and dynamic display of the process for constructing a structure layer by layer. Coupled with the process simulator and meshing tool, this modeling system can be used for device simulation. Further analysis of interconnection and circuit performance is made possible with other parameter extraction tools. The system configuration, its software components, and numerical techniques in processing mask data are discussed. The entire process of building an SRAM cell and generating an array of cells is demonstrated as an application example of the system
Keywords :
circuit layout CAD; engineering graphics; etching; integrated circuit interconnections; integrated circuit layout; integrated circuit modelling; semiconductor process modelling; solid modelling; vapour deposition; 2D cross sections; 3D perspective view; IC structures; automatic geometry update; device simulation; layout design information; layout processing information; layout-based 3D solid modeling; mask data processing; meshing tool; numerical techniques; parameter extraction tools; process simulator; software system; Circuit simulation; Coupling circuits; Displays; Geometry; Integrated circuit interconnections; Integrated circuit layout; Integrated circuit modeling; Process design; Software systems; Solid modeling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524643