A new lateral insulated base emitter switched thyristor

Author

Narayanan, E. M Sankara ; Qin, Z. ; De Souza, M.M. ; Amaratunga, G.

Author_Institution

SERCentre, De Montfort Univ., Leicester, UK

fYear

1998

fDate

3-6 Jun 1998

Firstpage

221

Lastpage

224

Abstract

In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature

Keywords

CMOS integrated circuits; MOS-controlled thyristors; semiconductor device models; semiconductor device testing; CMOS compatible lateral insulated base emitter switched thyristor structure; EST structures; LEST structures; LIBEST; MOS controlled bipolar transistor component; MOS controlled thyristor component; floating emitter length; lateral insulated base emitter switched thyristor; parallel connection; switching current; thyristor turn-on voltage; turn-on voltage; Bipolar transistors; CMOS technology; Cathodes; Dielectrics and electrical insulation; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Ohmic contacts; Power integrated circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702673

Filename

702673