Title :
A new lateral insulated base emitter switched thyristor
Author :
Narayanan, E. M Sankara ; Qin, Z. ; De Souza, M.M. ; Amaratunga, G.
Author_Institution :
SERCentre, De Montfort Univ., Leicester, UK
Abstract :
In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature
Keywords :
CMOS integrated circuits; MOS-controlled thyristors; semiconductor device models; semiconductor device testing; CMOS compatible lateral insulated base emitter switched thyristor structure; EST structures; LEST structures; LIBEST; MOS controlled bipolar transistor component; MOS controlled thyristor component; floating emitter length; lateral insulated base emitter switched thyristor; parallel connection; switching current; thyristor turn-on voltage; turn-on voltage; Bipolar transistors; CMOS technology; Cathodes; Dielectrics and electrical insulation; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Ohmic contacts; Power integrated circuits; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702673
